spec no: dsad2381 rev no: v.4 date: apr/23/2005 page: 1 of 3 approved: j. lu checked: joe lee drawn: w.j.zhu erp:1311000013 package dimensions & internal circuit diagram notes: 1. all dimensions are in millimeters (inches), tolerance is 0 .25(0.01")unless otherwise noted. 2. specifications are subject to change without notice. psa05 - 11srwa super bright red description the super bright red source color devices are made with gallium aluminum arsenide red light emitting diode. 12.7mm (0.5inch)16 segment single digit alphanumeric display features 0.5 inch character height. low current operation. high contrast and light output. easy mounting on p.c. boards or sockets. mechanically rugged. standard: gray face, white segment. rohs compliant. ( datasheet : )
spec no: dsad2381 rev no: v.4 date: apr/23/2005 page: 2 of 3 approved: j. lu checked: joe lee drawn: w.j.zhu erp:1311000013 selection guid e electrical / optical characteristics at t a =25 c absolute maximum ratings at t a =25 c notes: 1. 1/10 duty cycle, 0.1ms pulse width. 2. 5mm below package base. part no. dice lens type iv (ucd) @ 10ma min. typ. psa05 - 11srwa super bright red (gaaias) white diffused 4700 18000 common anode, rt. hand decimal. description symbol parameter device typ. max. test conditions units peak peak wavelength super bright red 660 nm i f =20ma d dominant wavelength super bright red 640 nm i f =20ma ? 1/2 spectral line half - width super bright red 20 nm i f =20ma c capacitance super bright red 45 pf v f =0v;f=1mhz v f forward voltage super bright red 1.85 2.5 v i f =20ma i r reverse current super bright red 10 ua v r = 5v parameter super bright red units power dissipation 100 mw dc forward current 30 ma peak forward current [1] 155 ma reverse voltage 5 v operating / storage temperature - 40c to +85c lead solder temperature [2] 260c for 5 seconds
spec no: dsad2381 rev no: v.4 date: apr/23/2005 page: 3 of 3 approved: j. lu checked: joe lee drawn: w.j.zhu erp:1311000013 super bright red psa05 - 11srwa remarks: if special sorting is required (e.g. binning based on forward voltage, luminous intensity, or wavelength), the typical accuracy of the sorting process is as follows: 1. wavelength: +/ - 1nm 2. luminous intensity: +/ - 15% 3. forward voltage: +/ - 0.1v note: accuracy may depend on the sorting parameters.
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